free schematics

irf5210 datasheet download

2012-02-07T21:31:00.000-08:00

IRF5210 HEXFET® Power MOSFET

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
P-Channel
Fully Avalanche Rated

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Absolute Maximum Ratings

Power Dissipation 200W

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irf1010ez,irf1010ezs,irf1010ezl datasheet

2012-02-07T21:10:00.000-08:00

IRF1010EZ IRF1010EZS IRF1010EZL HEXFET® Power MOSFET
AUTOMOTIVE MOSFET

Features
O Advanced Process Technology
O Ultra Low On-Resistance
O Dynamic dv/dt Rating
O 175°C Operating Temperature
O Fast Switching
O Repetitive Avalanche Allowed up to Tjmax

Description
Specifically designed for Automotive applications,this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional fea-
tures of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Absolute Maximum Ratings

Maximum Power Dissipation 140W

Pulsed Drain Current 340A

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irf1010e datasheet

2012-02-07T20:57:00.000-08:00

IRF1010E HEXFET® Power MOSFET

Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit,combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.

Absolute Maximum Ratings

Pulsed Drain Current 330A

Power Dissipation 200W

download full datasheet

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irf740 datasheet

2012-02-06T20:36:00.000-08:00

N-CHANNEL 400V - 0.46Ω - 10A TO-220 PowerMESH™II MOSFET

TYPICAL RDS(on) = 0.46Ω
* EXCEPTIONAL dv/dt CAPABILITY
* 100% AVALANCHE TESTED
* LOW GATE CHARGE
* VERY LOW INTRINSIC CAPACITANCES

DESCRIPTION :
The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refine-
ments introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.

APPLICATIONS
* HIGH-EFFICIENCY DC-DC CONVERTERS
* UPS AND MOTOR CONTROL

ABSOLUTE MAXIMUM RATINGS

Drain-source Voltage 400v

Drain-gate Voltage 400v

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IRF640 IRF640FP datasheet

2012-02-06T20:09:00.000-08:00

N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY MOSFET

* TYPICAL RDS(on) = 0.150 Ω
* EXTREMELYHIGH dV/dt CAPABILITY
* VERY LOWINTRINSIC CAPACITANCES
* GATE CHARGE MINIMIZED

DESCRIPTION :
This power MOSFET is designed using he company’s consolidated strip layout-basedMESH
OVERLAY process. This technology matches and improves the performances compared with
standard parts from various sources.

APPLICATIONS
* HIGH CURRENT SWITCHING
* UNINTERRUPTIBLE POWER SUPPLY (UPS)
* DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.

ABSOLUTE MAXIMUM RATINGS

Drain-source Voltage 200v

Drain- gate Voltage 200v

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irf540 datasheet

2012-02-06T19:55:00.000-08:00

28A, 100V, 0.077 Ohm, N-Channel Power MOSFETs
These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.
Formerly developmental type TA17421.

Features
• 28A, 100V
• rDS(ON) = 0.077Ω
• Single Pulse Avalanche Energy Rated
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”

Maximum Power Dissipation 120w

Drain to Source Breakdown Voltage 100v

Drain to Gate Voltage 100v

Pulsed Drain Current 110A

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1N5402 datasheet

2012-01-31T01:37:00.000-08:00

Features :

Diffused Junction
High Current Capability and Low Forward Voltage Drop
Surge Overload Rating to 200A Peak
Low Reverse Leakage Current
Lead Free Finish, RoHS Compliant

Mechanical Data :

Case: DO-201AD
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish Bright Tin. Plated Leads Solderable
per MIL-STD-202, Method 208
Polarity: Cathode Band
Mounting Position: Any
Marking: Type Number
Weight: 1.1 grams (approximate)

Parameter	Value	Units
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage	200	v
RMS Reverse Voltage	140	V
Average Rectified Output Current	3.0	A
Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method)	200	A
Forward Voltage	1.0	V
Power Dissipation	2.5	W
Operating and Storage Temperature Range	-65 to +150	°C
Typical Junction Capacitance	50	pF

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1n4937 datasheet

2012-01-31T01:14:00.000-08:00

Features
• Low forward voltage drop.
• High surge current capability.
• High reliability.
• High current capability.

Fast Rectifiers

Parameter	Value	Units
Maximum Repetitive Reverse Voltage	50	v
Average Rectified Forward Current, .375 " lead length @ TA = 50°C	1.0	A
Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave	30	A
Operating Junction Temperature	-50 to +150	°C
Storage Temperature Range	-50 to +150	°C
Power Dissipation	2.5	W
Forward Voltage @ 1.0 A	1.2	V
Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A	150	ns
Total Capacitance VR = 4.0 V, f = 1.0 MHz	12	pF

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5v to 3.3

2011-10-18T03:39:00.000-07:00

LM3940 1A Low Dropout Regulator for 5V to 3.3V Conversion

General Description :
The LM3940 is a 1A low dropout regulator designed to provide 3.3V from a 5V supply.
The LM3940 is ideally suited for systems which contain both 5V and 3.3V logic, with prime power provided from a 5V bus.
Because the LM3940 is a true low dropout regulator, it can hold its 3.3V output in regulation with input voltages as low as 4.5V.
The T0-220 package of the LM3940 means that in most applications the full 1A of load current can be delivered without using an additional heatsink.
The surface mount TO-263 package uses minimum board space, and gives excellent power dissipation capability when soldered to a copper plane on the PC board.

Features
■ Output voltage specified over temperature
■ Excellent load regulation
■ Guaranteed 1A output current
■ Requires only one external component
■ Built-in protection against excess temperature
■ Short circuit protected
Applications
■ Laptop/Desktop Computers
■ Logic Systems

Typical Application

Connection Diagram

transformerless power supply circuit

2011-10-02T06:08:00.000-07:00

1- transformerless power supply circuit 11 volts

Parts :

C1 = 0.39uF 250V Capacitor

C2 = 220uF 25V Electrolytic Capacitor

D1 = 1N4741 11V Zener Diode

BR1 = 1 Amp 200V Bridge Rectifier

2 - TransformerLess Power Supply circuit 12V 100mA

what power supply

2011-09-08T01:45:00.000-07:00

Also called a power supply unit or PSU, the component that supplies power to a computer. Most personal computers can be plugged into standard electrical outlets. The power supply then pulls the required amount of electricity and converts the AC current to DC current. It also regulates the voltage to eliminate spikes and surges common in most electrical systems. Not all power supplies, however, do an adequate voltage-regulation job, so a computer is always susceptible to large voltage fluctuations.

Power supplies are rated in terms of the number of watts they generate. The more powerful the computer, the more watts it can provide to components.

Two Transistors Audio Amplifier used 2n3706 and 2n3565

2011-06-07T22:56:00.000-07:00

primary of any transistor radio output transformer for speaker

Two Transistors Audio Amplifier used 2n3706 and 2n3565

AMPLIFICATEUR AM-FM/SSB 40 WATTS 26 TO 30 Mhz

2011-06-07T22:03:00.000-07:00

device is the

amplifier (MRF 455 ‡ 60 watts max rf power or MRF 454 ‡80 watts rf
power)

The purpose of this amplifier is to lower output energy from output
transistor inside the radio and give strong modulation at higher deadkey
than a power peaked radio with less modulation.
I tell you something I have 2 of these amplifier and I have sold one
and results are very honest (big audio with nice output power)
But I know it’s not 250 watts, however it’s better than a peaked radio with
low modulation)
12Volts: connect power source here
Radio in: connect the radio here
Out/ant: connect antenna here

Power on indicator:
Led1 and R1 are used to indicate to user that 12 volt is applied to amplifier
RF detection and switching system:
C3 block any DC path between radio and RF amplifier
D1 and D2: these diodes rectifiers the RF voltage to produce DC voltage in
conjonction with C5, C4
R2 is a current limiter to prevent to smoke T1
T1 activate the relay dpdt 12Volts
RF circuit:
T2: RF power transistor, this is the central unit, this device is the

amplifier (MRF 455 ‡ 60 watts max rf power or MRF 454 ‡80 watts rf
power)

R4 and R5: these resistor network is used to applied the desired
carrier amplitude to the RF power transistor (T2)
C7,C6,L3 are used to filter and make a bandpass network at the input
of T1
L2, R3 used to make class C operation
L1, it’s a RF choke, block RF energy to take path in DC supply
C10, C11, C12,C13 and L4 are used to make and resonnant circuit to
produce an output waveform with no distorsion.
C8 and C9 these capacitors block DC voltage

Tips and tricks about this amplifier:
You have to connect your power supply ground to case of your amplifier
Of course the shield of your coax will be connected via the PL259 to your
Amplifier. Also make a good connection to power supply ground to your
RF circuit ( if you want that your circuit being supply ;) )
If you want to adjust sensitivity of your RF power transistor
spread more or least L3. Mine key with 0.6 watt, it’s preserve
my output transistor on my 2950.
Note: When L3 is tight the sensibility is at the maximum.
And vice-versa
It’s possible to add a two stage variable power, check on the schematic
(Low and High)
Fuse should be set to 8 amp.
Don’t put higher fuse because it will not protect your amplifer
Great modulation appear at 35 watts and swing up to 55-60 watts

On my side it’s really loud and clear.
MRF455 is a 60 device and needs a lower deadkey than the MRF454 (80
watts)

amplifier KP904

2011-06-07T21:38:00.000-07:00

Figure Concept amplifier KP904

amplifier KP904 30 watt

resistor calculator

2011-02-08T13:32:00.000-08:00

Resistor Calculator 1.0

Features of Resistor Calculator at a glance:

Calculating the color code of a resistor value.
Calculating the resistor value of a color code.
Displaying the closest resistor of the E series and Renard numbers.
Resistor calculation for LED circuits (single, in series, parallel).
Integrated help system.
Automatic program updates.
Multilingual (at the moment English and German).
Intuitive program interface.
Free e-mail support in case of problems or questions.
All updates for free.

>> Download Resistor Calculator <<

source :http://www.ab-tools.com/English/software/resistorcalculator/

4 channels mixer voltage controlled

2010-11-24T21:01:00.000-08:00

The audio mixer schematic we propose is developed arround 4 amplifiers build inside SSM2024 produced by Precision Monolithics Inc. (PMI) and is voltage controlled (VR).

The maximum VR voltage is 5.5Volt. The signal/noise ratio is 90dB and 130Khz band wide. This 4 channels mixer works great at +- 15Volt but you can use voltages between 9Volt and 18Volt.
4 channels mixer voltage controlled
Audio mixer circuit schematic

1.2 volts power supply

2010-11-23T02:56:00.000-08:00

This switch mode power supply circuit require an input voltage range , between 4.5V to 16V,and will provide a very stable output voltage of 1.2 volt . The LTM4627 supports an output voltage range of 0.6V to 5V, set by a single external resistor , so you can modify the output voltage .

High switching frequency and a current mode architecture enable a very fast transient response to line and load changes without sacrificing stability.

1.2 volts power supply

Variable switching power supply using LM317

2010-11-23T02:49:00.000-08:00

Another power supply electronic circuit that is designed using LM317 voltage regulator can be designed using few electronic parts . This power supply circuit is a very simple low cost switching regulator electronic project that is based on the LM317 three terminal regulator .

As you can see in the circuit diagram this power supply electronic project require few external components and a LM317HV regulator . The input voltage required by this electronic project must be between 8 and 35 volt , and will provide a variable output voltage over a wide range , from 1.8 volts up to 32 volts
The maximum output current that can be delivered by this LM317HV switching power supply electronic project is up to 3 amperes .

C1 , C4 capacitors must be a solid tantalum type and L1 coil must have a 600uH inductance . For L1 coil you can use a Arnold A-254168-2 core with 60 turns .

source:http://www.electroniq.net

UM3561 electronic siren circuit diagram

2010-11-23T02:37:00.000-08:00

This siren alarm circuit diagram is based on a specialized IC UM3561 , which is a low power CMOS LSI specially designed for this type of applications . The UM3561 contains all needed parts ( oscillator , selector circuits , programmed mask ROM ) to simulate siren sound using few external components .

The siren circuit require a power supply circuit around 3 volts and has a low current . The UM3561 siren sound generator circuit has possibility to generate four types of sounds : police siren , fire engine siren , ambulance siren and machine gun sound .

The transistor used in this project must be 2SC9013 , 2SC8050 or similar type .

The speaker used at the output must have 8 ohms impedance and a 0.2 watts power .

As you can see in these three circuit diagrams , the configuration for the siren is very simple .
UM3561 electronic siren circuit diagram
Police siren , fire engine siren , ambulance siren and machine gun sound .

Police siren , fire engine siren , ambulance siren .

Police siren and machine gun sound .

source :http://www.electroniq.net

Simple mixer circuit – Common base

2010-11-23T02:22:00.000-08:00

The simple mixer schematic is built on common base principle, where input voltages are transformed in alternative currents wich are summed to form the alternative current component for the collector. The total amplification is R6 - Ri, where Ri is one of the input resistors. I’ve build this mixer for a little transmitter and works great.

Simple mixer circuit – Common base

Simple mixer circuit – Common base
source :http://electroschematics.com

IRF740 Datasheet , power MOSFET

2010-11-15T12:47:00.000-08:00

N - CHANNEL 400V - 0.48 Ω - 10 A - TO-220
PowerMESH MOSFET

This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources.

APPLICATIONS
# HIGH CURRENT SWITCHING
# UNINTERRUPTIBLE POWER SUPPLY (UPS
# DC/DC COVERTERS FOR TELECOM,
# INDUSTRIAL, AND LIGHTING EQUIPMENT

MOSFET, N, 400V, 10A, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:400V; Current, Id Cont:10A; Resistance, Rds On:0.55ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220AB; Termination Type:Through Hole; Current, Idm Pulse:40A; Power Dissipation:125W; Power, Pd:125W; Thermal Resistance, Junction to Case A:1 C/W; Voltage, Vds Max:400V

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download datasheet

Power MOSFET IRFP264, SiHFP264 datasheet

2010-11-15T12:16:00.000-08:00

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole.
It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

FEATURES

• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available

Maximum Power Dissipation = 280w
Drain-Source Voltage = 250v
Gate-Source Voltage = ± 20

ORDERING INFORMATION :

Package : TO-247

Lead (Pb)-free : IRFP264PbF , SiHFP264-E3 .

SnPb : IRFP264 , SiHFP264 .

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IRFP250 free Datasheet

2010-11-15T11:58:00.000-08:00

33A, 200V, 0.085 Ohm, N-Channel
Power MOSFET

This N-Channel enhancement mode silicon gate power ﬁeld effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a speciﬁed level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers,
relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits Formerly developmental type TA9295.

IRFP250 FET 200V 33A 180W

IRFP250

Features

• 33A, 200V
•rDS(ON) = 0.085Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Moun
Components to PC Boards”

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Power Amplifier with 2N3055

2010-08-01T20:07:00.000-07:00

Simple and low cost. The optimal supply voltage is around 50V, but this amp work from 30 to 60V. The maximal input voltage is around 0.8 – 1V. As you can see, in this design the components have a big tolerance, so you can build it almost of the components, which you find at home. The and transistors can be any NPN type power transistor, but do not use Darlington types… The output power is around 60W.

Some comments:

- capacitor C1 regulates the low frequencies (bass), as the capacitance grows, the low frequncies are getting louder.

– capacitor C2 regulates the higher frequencies (treble), as the capacitance grows, the higher frequencies are getting quiter.

– this is a class B amplifier, this means, that a current must flow through the end transistors, even if there is no signal on the input. This current can be regulated with the 500? trimmer resistor. As this current incrases, the sound of the amplifier gets better, but the end transistors are more heating. But if this current decrases, the transistors are not heating so much, but the sound gets worse…

copy from : http://www.electronics-lab.com/projects/audio/042/index.html

12V LED Flasher for Cars

2010-08-01T20:00:00.001-07:00

This is so wonderful circuit diagram Because you can up grade the out look of you car or van by using this simple circuit .Actually this is a blinking Led circuit on the other hand this circuit is called multivibrator circuit.The impotent thing of this circuit is this circuit can be operated with 12V power supply

source : http://freecircuitdiagrams4u.blogspot.com/2010/07/12v-led-flasher-for-cars.html