<?xml version='1.0' encoding='UTF-8'?><?xml-stylesheet href="http://www.blogger.com/styles/atom.css" type="text/css"?><feed xmlns='http://www.w3.org/2005/Atom' xmlns:openSearch='http://a9.com/-/spec/opensearchrss/1.0/' xmlns:blogger='http://schemas.google.com/blogger/2008' xmlns:georss='http://www.georss.org/georss' xmlns:gd="http://schemas.google.com/g/2005" xmlns:thr='http://purl.org/syndication/thread/1.0'><id>tag:blogger.com,1999:blog-753459718586809216</id><updated>2024-10-03T06:09:57.516-07:00</updated><category term="Basic steps in IC fabrication"/><category term="Introduction to IC"/><category term="LSI (Large Scale Integration)"/><category term="SSI (Small MSI (Medium Scale Integration)"/><category term="Scale Integration)"/><category term="VLSI (Very Large Scale Integration)"/><title type='text'>Electronics</title><subtitle type='html'></subtitle><link rel='http://schemas.google.com/g/2005#feed' type='application/atom+xml' href='http://electronicsandu.blogspot.com/feeds/posts/default'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/753459718586809216/posts/default?redirect=false'/><link rel='alternate' type='text/html' href='http://electronicsandu.blogspot.com/'/><link rel='hub' href='http://pubsubhubbub.appspot.com/'/><author><name>Unknown</name><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='16' height='16' src='https://img1.blogblog.com/img/b16-rounded.gif'/></author><generator version='7.00' uri='http://www.blogger.com'>Blogger</generator><openSearch:totalResults>2</openSearch:totalResults><openSearch:startIndex>1</openSearch:startIndex><openSearch:itemsPerPage>25</openSearch:itemsPerPage><entry><id>tag:blogger.com,1999:blog-753459718586809216.post-489280335183674625</id><published>2011-09-07T00:18:00.000-07:00</published><updated>2011-07-09T01:45:36.180-07:00</updated><category scheme="http://www.blogger.com/atom/ns#" term="Basic steps in IC fabrication"/><category scheme="http://www.blogger.com/atom/ns#" term="Introduction to IC"/><category scheme="http://www.blogger.com/atom/ns#" term="LSI (Large Scale Integration)"/><category scheme="http://www.blogger.com/atom/ns#" term="Scale Integration)"/><category scheme="http://www.blogger.com/atom/ns#" term="SSI (Small MSI (Medium Scale Integration)"/><category scheme="http://www.blogger.com/atom/ns#" term="VLSI (Very Large Scale Integration)"/><title type='text'>Introduction to IC</title><content type='html'>&lt;div class=&quot;MsoNormal&quot; style=&quot;line-height: normal; margin-bottom: 0.0001pt;&quot;&gt;&lt;u&gt;&lt;span style=&quot;font-family: &#39;Times New Roman&#39;,serif;&quot;&gt;&lt;o:p _moz-userdefined=&quot;&quot;&gt;&lt;b&gt;Integrated Circuit&lt;/b&gt;&lt;/o:p&gt;&lt;/span&gt;&lt;/u&gt;&lt;br /&gt;
&lt;u&gt;&lt;span style=&quot;font-family: &#39;Times New Roman&#39;,serif;&quot;&gt;&lt;o:p _moz-userdefined=&quot;&quot;&gt;&lt;br /&gt;
&lt;/o:p&gt;&lt;/span&gt;&lt;/u&gt;&lt;/div&gt;&lt;div class=&quot;MsoNormal&quot; style=&quot;line-height: normal; margin-bottom: 0.0001pt;&quot;&gt;&lt;span class=&quot;Apple-style-span&quot;&gt;&lt;span style=&quot;font-family: &#39;Times New Roman&#39;,serif;&quot;&gt;&lt;o:p _moz-userdefined=&quot;&quot;&gt;&lt;b&gt;        &lt;/b&gt;&lt;/o:p&gt;&lt;/span&gt;&lt;span style=&quot;color: black; font-family: &amp;quot;Times New Roman&amp;quot;,&amp;quot;serif&amp;quot;;&quot;&gt;A &lt;/span&gt;&lt;span style=&quot;color: red; font-family: &#39;Times New Roman&#39;,serif;&quot;&gt;collection of one or more gates fabricated on a single silicon chip is called an &lt;/span&gt;&lt;span style=&quot;color: red; font-family: &#39;Times New Roman&#39;,serif;&quot;&gt;integrated circuit (IC)&lt;/span&gt;&lt;span style=&quot;color: black; font-family: &#39;Times New Roman&#39;,serif;&quot;&gt;.&lt;/span&gt;&lt;/span&gt;&lt;br /&gt;
&lt;span class=&quot;Apple-style-span&quot;&gt;&lt;span style=&quot;color: black; font-family: &#39;Times New Roman&#39;,serif;&quot;&gt;&amp;nbsp;.&lt;/span&gt;&lt;/span&gt;&lt;br /&gt;
&lt;span class=&quot;Apple-style-span&quot;&gt;&lt;span style=&quot;color: black; font-family: &#39;Times New Roman&#39;,serif;&quot;&gt; &lt;/span&gt;&lt;/span&gt;&lt;/div&gt;&lt;div class=&quot;MsoNormal&quot; style=&quot;line-height: normal; margin-bottom: 0.0001pt;&quot;&gt;&lt;u&gt;&lt;span class=&quot;Apple-style-span&quot;&gt;&lt;span style=&quot;font-family: &#39;Times New Roman&#39;,serif;&quot;&gt;&lt;o:p _moz-userdefined=&quot;&quot;&gt; &lt;/o:p&gt;&lt;/span&gt;&lt;span class=&quot;Apple-style-span&quot; style=&quot;font-family: &#39;Times New Roman&#39;,serif;&quot;&gt;&lt;b&gt;Generations of Integration Circuits&lt;/b&gt;&lt;/span&gt;&lt;/span&gt;&lt;/u&gt;&lt;/div&gt;&lt;div class=&quot;MsoNormal&quot; style=&quot;line-height: normal; margin-bottom: 0.0001pt;&quot;&gt;&lt;span style=&quot;font-family: &#39;Times New Roman&#39;,serif;&quot;&gt; &lt;span class=&quot;Apple-tab-span&quot; style=&quot;white-space: pre;&quot;&gt; &lt;/span&gt;SSI (Small Scale Integration) &lt;o:p _moz-userdefined=&quot;&quot;&gt;&lt;/o:p&gt;&lt;/span&gt;&lt;/div&gt;&lt;div class=&quot;MsoNormal&quot; style=&quot;line-height: normal; margin-bottom: 0.0001pt;&quot;&gt;&lt;span style=&quot;font-family: &#39;Times New Roman&#39;,serif;&quot;&gt; &lt;span class=&quot;Apple-tab-span&quot; style=&quot;white-space: pre;&quot;&gt; &lt;/span&gt;MSI (Medium Scale Integration)&lt;o:p _moz-userdefined=&quot;&quot;&gt;&lt;/o:p&gt;&lt;/span&gt;&lt;/div&gt;&lt;div class=&quot;MsoNormal&quot; style=&quot;line-height: normal; margin-bottom: 0.0001pt;&quot;&gt;&lt;span style=&quot;font-family: &#39;Times New Roman&#39;,serif;&quot;&gt; &lt;span class=&quot;Apple-tab-span&quot; style=&quot;white-space: pre;&quot;&gt; &lt;/span&gt;LSI (Large Scale Integration)&lt;o:p _moz-userdefined=&quot;&quot;&gt;&lt;/o:p&gt;&lt;/span&gt;&lt;/div&gt;&lt;div class=&quot;MsoNormal&quot; style=&quot;line-height: normal; margin-bottom: 0.0001pt;&quot;&gt;&lt;span style=&quot;font-family: &#39;Times New Roman&#39;,serif;&quot;&gt; &lt;span class=&quot;Apple-tab-span&quot; style=&quot;white-space: pre;&quot;&gt; &lt;/span&gt;VLSI (Very Large Scale Integration)&lt;o:p _moz-userdefined=&quot;&quot;&gt;&lt;/o:p&gt;&lt;/span&gt;&lt;/div&gt;&lt;div class=&quot;MsoNormal&quot; style=&quot;line-height: normal; margin-bottom: 0.0001pt;&quot;&gt;&lt;/div&gt;&lt;div class=&quot;MsoNormal&quot; style=&quot;line-height: normal; margin-bottom: 0.0001pt;&quot;&gt;&lt;span style=&quot;font-family: &#39;Times New Roman&#39;,serif;&quot;&gt;&lt;b&gt;&lt;u&gt;VLSI&lt;/u&gt;&lt;/b&gt;&lt;/span&gt;&lt;/div&gt;&lt;div class=&quot;MsoNormal&quot; style=&quot;line-height: normal; margin-bottom: 0.0001pt;&quot;&gt;&lt;span class=&quot;Apple-style-span&quot;&gt;&lt;span style=&quot;font-family: &#39;Times New Roman&#39;,serif;&quot;&gt;VLSI, or Very Large Scale Integration refers to a technology through which &lt;/span&gt;&lt;span class=&quot;Apple-style-span&quot; style=&quot;font-family: &#39;Times New Roman&#39;,serif;&quot;&gt;it is possible to implement large circuits in silicon - circuits with up to a &lt;/span&gt;&lt;span class=&quot;Apple-style-span&quot; style=&quot;font-family: &#39;Times New Roman&#39;,serif;&quot;&gt;million transistors. The VLSI technology has been successfully used to build &lt;/span&gt;&lt;span class=&quot;Apple-style-span&quot; style=&quot;font-family: &#39;Times New Roman&#39;,serif;&quot;&gt;microprocessors, signal processors, memories.&lt;/span&gt;&lt;/span&gt;&lt;/div&gt;&lt;div class=&quot;MsoNormal&quot; style=&quot;line-height: normal; margin-bottom: 0.0001pt;&quot;&gt;&lt;span class=&quot;Apple-style-span&quot; style=&quot;font-family: &#39;Times New Roman&#39;,serif;&quot;&gt;The miniaturization of hand held device is a great example of VLSI.&lt;/span&gt;&lt;/div&gt;&lt;div class=&quot;MsoNormal&quot; style=&quot;line-height: normal; margin-bottom: 0.0001pt;&quot;&gt;&lt;span style=&quot;font-family: &#39;Times New Roman&#39;,serif;&quot;&gt;&lt;o:p _moz-userdefined=&quot;&quot;&gt;&lt;br /&gt;
&lt;/o:p&gt;&lt;/span&gt;&lt;/div&gt;&lt;div class=&quot;MsoNormal&quot; style=&quot;line-height: normal; margin-bottom: 0.0001pt;&quot;&gt;&lt;span class=&quot;Apple-style-span&quot;&gt;&lt;span style=&quot;font-family: &#39;Times New Roman&#39;,serif;&quot;&gt;&lt;o:p _moz-userdefined=&quot;&quot;&gt; &lt;/o:p&gt;&lt;/span&gt;&lt;span class=&quot;Apple-style-span&quot; style=&quot;font-family: &#39;Times New Roman&#39;,serif;&quot;&gt;&lt;b&gt;&lt;u&gt;Challenges in designing an IC&lt;/u&gt;&lt;/b&gt;&lt;/span&gt;&lt;/span&gt;&lt;/div&gt;&lt;div class=&quot;MsoNormal&quot; style=&quot;line-height: normal; margin-bottom: 0.0001pt;&quot;&gt;&lt;span class=&quot;Apple-style-span&quot;&gt;&lt;span style=&quot;font-family: &#39;Times New Roman&#39;,serif;&quot;&gt; &lt;/span&gt;&lt;span style=&quot;font-family: &#39;Times New Roman&#39;,serif;&quot;&gt;Small Size&lt;/span&gt;&lt;/span&gt;&lt;/div&gt;&lt;div class=&quot;MsoNormal&quot; style=&quot;line-height: normal; margin-bottom: 0.0001pt;&quot;&gt;&lt;span class=&quot;Apple-style-span&quot; style=&quot;font-family: &#39;Times New Roman&#39;,serif;&quot;&gt; High Speed&lt;/span&gt;&lt;/div&gt;&lt;div class=&quot;MsoNormal&quot; style=&quot;line-height: normal; margin-bottom: 0.0001pt;&quot;&gt;&lt;span style=&quot;font-family: &#39;Times New Roman&#39;,serif;&quot;&gt; Less Power Dissipation&lt;o:p _moz-userdefined=&quot;&quot;&gt;&lt;/o:p&gt;&lt;/span&gt;&lt;/div&gt;&lt;div class=&quot;MsoNormal&quot; style=&quot;line-height: normal; margin-bottom: 0.0001pt;&quot;&gt;&lt;span class=&quot;Apple-style-span&quot; style=&quot;font-family: &#39;Times New Roman&#39;,serif;&quot;&gt;&lt;b&gt;&lt;u&gt;Basic steps in IC fabrication&lt;/u&gt;&lt;/b&gt;&lt;/span&gt;&lt;/div&gt;</content><link rel='replies' type='application/atom+xml' href='http://electronicsandu.blogspot.com/feeds/489280335183674625/comments/default' title='Post Comments'/><link rel='replies' type='text/html' href='http://electronicsandu.blogspot.com/2011/07/introduction-to-ic.html#comment-form' title='0 Comments'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/753459718586809216/posts/default/489280335183674625'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/753459718586809216/posts/default/489280335183674625'/><link rel='alternate' type='text/html' href='http://electronicsandu.blogspot.com/2011/07/introduction-to-ic.html' title='Introduction to IC'/><author><name>Vlsi4u</name><uri>http://www.blogger.com/profile/12946039101359833907</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='22' src='//blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEg4FIjfH0gdRsgN7xdLYcQBYnjtDHKFlfqnhGicad12qCC-gR2lzLQDl0Olf5Eg6fYHJIAGbzwfcu1iVDP9dm9Ll1iq5pceqCG-NqXNTfUmkNgqBggHMGyeZpzLhk6jhQQ/s220/images.jpg'/></author><thr:total>0</thr:total></entry><entry><id>tag:blogger.com,1999:blog-753459718586809216.post-4887177049501616281</id><published>2011-07-17T03:48:00.000-07:00</published><updated>2011-07-17T03:54:23.517-07:00</updated><title type='text'>Introduction to MOSFET</title><content type='html'>&lt;b&gt;Metal Oxide Semiconductor Field Effect Transistors ( MOSFET )&lt;/b&gt;&lt;br /&gt;&lt;p class=&quot;MsoNormal&quot;&gt;&lt;span class=&quot;Apple-style-span&quot; style=&quot;font-family: &#39;Times New Roman&#39;; font-size: medium; &quot;&gt;A metal-oxide-semiconductor field-effect transistor (MOSFET) has three terminals, source, gate, and drain. In a p-MOSFET (or n-MOSFET), both the source S and drain D are n-type (or p-type) and the substrate between them is p-type (or n-type). The gate and the p-type subs&lt;/span&gt;&lt;span class=&quot;Apple-style-span&quot; style=&quot;font-family: &#39;Times New Roman&#39;; font-size: medium; &quot;&gt;trate is insulated by a thin layer of&lt;/span&gt;&lt;span class=&quot;Apple-style-span&quot; style=&quot;font-family: &#39;Times New Roman&#39;; font-size: medium; &quot;&gt; &lt;/span&gt;&lt;span class=&quot;Apple-style-span&quot; style=&quot;font-family: &#39;Times New Roman&#39;; font-size: medium; &quot;&gt;&lt;img width=&quot;45&quot; height=&quot;35&quot; align=&quot;MIDDLE&quot; border=&quot;0&quot; src=&quot;http://fourier.eng.hmc.edu/e84/lectures/ch4/img405.png&quot; alt=&quot;$SiO_2$&quot; /&gt;&lt;/span&gt;&lt;span class=&quot;Apple-style-span&quot; style=&quot;font-family: &#39;Times New Roman&#39;; font-size: medium; &quot;&gt;. Due to this insulation, there is no gate current to either the source or drain.&lt;/span&gt;&lt;/p&gt;&lt;p class=&quot;MsoNormal&quot;&gt;&lt;/p&gt;&lt;p class=&quot;MsoNormal&quot; style=&quot;margin-left: 0.5in; text-indent: -0.25in; &quot;&gt;&lt;span style=&quot;font-family: Wingdings; &quot;&gt;&lt;span&gt;n&lt;span style=&quot;font: normal normal normal 7pt/normal &#39;Times New Roman&#39;; &quot;&gt; &lt;/span&gt;&lt;/span&gt;&lt;/span&gt;In an n-channel MOSFET, the channel is made of n-type semiconductor, so the charges free to move along the channel are negatively charged &lt;i&gt;(electrons)&lt;/i&gt;.&lt;/p&gt;&lt;p class=&quot;MsoNormal&quot; style=&quot;margin-left: 0.5in; text-indent: -0.25in; &quot;&gt;&lt;span style=&quot;font-family: Wingdings; &quot;&gt;&lt;span&gt;n&lt;span style=&quot;font: normal normal normal 7pt/normal &#39;Times New Roman&#39;; &quot;&gt; &lt;/span&gt;&lt;/span&gt;&lt;/span&gt;In a p-channel device the free charges which move from end-to-end are positively charged (&lt;i&gt;holes)&lt;/i&gt;.&lt;/p&gt;&lt;p&gt;&lt;/p&gt;  &lt;p class=&quot;MsoNormal&quot;&gt;&lt;b&gt;  &lt;u&gt;Basic MOSFET (n-channel)&lt;/u&gt;&lt;/b&gt;&lt;/p&gt;&lt;p class=&quot;MsoNormal&quot; style=&quot;margin-left:.5in;text-indent:-.25in;mso-list:l1 level1 lfo1; tab-stops:list .5in&quot;&gt;&lt;!--[if !supportLists]--&gt;&lt;img src=&quot;https://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEjPzTp3A4LbBbpstVM01V8P_DL02c6lv-a2Dv-JpbNs-OYbe0Fne65jAB_JX-w2Lu_JaqvUtpsmI9MlasQYxFpfQWBAd8KMsvFkty9Q4qCMnG9BMbCUrd86Q5XY_4qk-mlmmel4Ca34W7Sb/s400/nmos.bmp&quot; style=&quot;cursor:pointer; cursor:hand;width: 400px; height: 244px;&quot; border=&quot;0&quot; alt=&quot;&quot; id=&quot;BLOGGER_PHOTO_ID_5630264183164417714&quot; /&gt;&lt;/p&gt;&lt;p class=&quot;MsoNormal&quot; style=&quot;margin-left:.5in;text-indent:-.25in;mso-list:l1 level1 lfo1; tab-stops:list .5in&quot;&gt;&lt;span style=&quot;font-family:Wingdings; mso-fareast-font-family:Wingdings;mso-bidi-font-family:Wingdings;mso-bidi-font-weight: bold&quot;&gt;&lt;span style=&quot;mso-list:Ignore&quot;&gt;n&lt;span style=&quot;font:7.0pt &amp;quot;Times New Roman&amp;quot;&quot;&gt;  &lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;!--[endif]--&gt;&lt;b&gt;The gate electrode is placed on top of a very thin insulating layer. &lt;o:p&gt;&lt;/o:p&gt;&lt;/b&gt;&lt;/p&gt;  &lt;p class=&quot;MsoNormal&quot; style=&quot;margin-left:.5in;text-indent:-.25in;mso-list:l1 level1 lfo1; tab-stops:list .5in&quot;&gt;&lt;span style=&quot;font-family:Wingdings; mso-fareast-font-family:Wingdings;mso-bidi-font-family:Wingdings;mso-bidi-font-weight: bold&quot;&gt;&lt;span style=&quot;mso-list:Ignore&quot;&gt;n&lt;span style=&quot;font:7.0pt &amp;quot;Times New Roman&amp;quot;&quot;&gt;  &lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;b&gt;There are a pair of small n-type region&lt;/b&gt;&lt;b&gt;s just under the drain &amp;amp; source electrodes.&lt;/b&gt;&lt;/p&gt;&lt;p class=&quot;MsoNormal&quot; style=&quot;margin-left:.5in;text-indent:-.25in;mso-list:l1 level1 lfo1; tab-stops:list .5in&quot;&gt;&lt;span style=&quot;font-family:Wingdings; mso-fareast-font-family:Wingdings;mso-bidi-font-family:Wingdings;mso-bidi-font-weight: bold&quot;&gt;&lt;span style=&quot;mso-list:Ignore&quot;&gt;n&lt;span style=&quot;font:7.0pt &amp;quot;Times New Roman&amp;quot;&quot;&gt;  &lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;b&gt;If ap&lt;/b&gt;&lt;b&gt;ply a&lt;/b&gt;&lt;b&gt; +ve voltage to ga&lt;/b&gt;&lt;b&gt;te, will push away t&lt;/b&gt;&lt;b&gt;he ‘holes’ inside the p-type substrate and attracts the moveable electrons in the n-type regions under the source &amp;amp; drain electrodes.&lt;/b&gt;&lt;/p&gt;  &lt;p class=&quot;MsoNormal&quot; style=&quot;margin-left:.5in;text-indent:-.25in;mso-list:l1 level1 lfo1; tab-stops:list .5in&quot;&gt;&lt;!--[if !supportLists]--&gt;&lt;span style=&quot;font-family:Wingdings; mso-fareast-font-family:Wingdings;mso-bidi-font-family:Wingdings;mso-bidi-font-weight: bold&quot;&gt;&lt;span style=&quot;mso-list:Ignore&quot;&gt;n&lt;span style=&quot;font:7.0pt &amp;quot;Times New Roman&amp;quot;&quot;&gt;  &lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;!--[endif]--&gt;&lt;b&gt;Increasing the +ve gate voltage pushes the p-type holes further away and enlarges the thickness of the created channel.&lt;/b&gt;&lt;/p&gt;  &lt;p class=&quot;MsoNormal&quot; style=&quot;margin-left:.5in;text-indent:-.25in;mso-list:l1 level1 lfo1; tab-stops:list .5in&quot;&gt;&lt;!--[if !supportLists]--&gt;&lt;span style=&quot;font-family:Wingdings; mso-fareast-font-family:Wingdings;mso-bidi-font-family:Wingdings;mso-bidi-font-weight: bold&quot;&gt;&lt;span style=&quot;mso-list:Ignore&quot;&gt;n&lt;span style=&quot;font:7.0pt &amp;quot;Times New Roman&amp;quot;&quot;&gt;  &lt;/span&gt;&lt;/span&gt;&lt;/span&gt;&lt;!--[endif]--&gt;&lt;b&gt;As a result increases the amount of current which can go from source to drain — this is why this kind of transistor is called an &lt;i&gt;e&lt;/i&gt;&lt;/b&gt;&lt;b&gt;&lt;i&gt;nhancement mode&lt;/i&gt; device.&lt;/b&gt;&lt;/p&gt;  &lt;p class=&quot;MsoNormal&quot;&gt;&lt;o:p&gt; &lt;/o:p&gt;&lt;/p&gt;  &lt;p class=&quot;MsoNormal&quot;&gt;&lt;o:p&gt; &lt;/o:p&gt;&lt;/p&gt;  &lt;p class=&quot;MsoNormal&quot;&gt;&lt;b style=&quot;mso-bidi-font-weight:normal&quot;&gt; &lt;u&gt;Cross-section and circuit symbol of an n-type MOSFET&lt;/u&gt;&lt;o:p&gt;&lt;/o:p&gt;&lt;/b&gt;&lt;/p&gt;&lt;p class=&quot;MsoNormal&quot;&gt;&lt;b style=&quot;mso-bidi-font-weight:normal&quot;&gt;&lt;u&gt;&lt;br /&gt;&lt;/u&gt;&lt;/b&gt;&lt;/p&gt;&lt;p class=&quot;MsoNormal&quot;&gt;&lt;img src=&quot;https://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEjQbcxG2TFXFGKYfyflx6E4TKM8P9D2WFXyvaH2cdIQ5Kow4SNLHmIRs5pc_pOjl9xiR6wHyp5B5j8ADCYdrVpZ9xPyiq6Hi7-zdmguOstKj8Q44nIRePpDKOhPJxePBCvVrQFGhH-fx4LS/s400/nmos.bmp&quot; style=&quot;cursor:pointer; cursor:hand;width: 400px; height: 234px;&quot; border=&quot;0&quot; alt=&quot;&quot; id=&quot;BLOGGER_PHOTO_ID_5630267878665737298&quot; /&gt;&lt;/p&gt;&lt;p class=&quot;MsoNormal&quot;&gt;&lt;b style=&quot;mso-bidi-font-weight:normal&quot;&gt;&lt;u&gt;&lt;br /&gt;&lt;/u&gt;&lt;/b&gt;&lt;/p&gt;  &lt;p class=&quot;MsoNormal&quot;&gt;&lt;o:p&gt; &lt;/o:p&gt;&lt;/p&gt;  &lt;p class=&quot;MsoNormal&quot;&gt;&lt;o:p&gt; &lt;/o:p&gt;&lt;/p&gt;  &lt;p class=&quot;MsoNormal&quot;&gt;&lt;o:p&gt; &lt;/o:p&gt;&lt;/p&gt;  &lt;p class=&quot;MsoNormal&quot;&gt;&lt;o:p&gt; &lt;/o:p&gt;&lt;b&gt;Basic MOSFET (p-channel)&lt;/b&gt;&lt;/p&gt;  &lt;p class=&quot;MsoNormal&quot; style=&quot;margin-left:.5in;text-indent:-.25in;mso-list:l0 level1 lfo2; tab-stops:list .5in&quot;&gt;&lt;!--[if !supportLists]--&gt;&lt;span style=&quot;font-family:Wingdings; mso-fareast-font-family:Wingdings;mso-bidi-font-family:Wingdings&quot;&gt;&lt;span style=&quot;mso-list:Ignore&quot;&gt;n&lt;span style=&quot;font:7.0pt &amp;quot;Times New Roman&amp;quot;&quot;&gt;  &lt;/span&gt;&lt;/span&gt;&lt;/span&gt;PMOS behave in similar way, but they pass current when a -ve gate voltage creates an effective p-type channel layer under the insulator.&lt;/p&gt;&lt;p class=&quot;MsoNormal&quot; style=&quot;margin-left:.5in;text-indent:-.25in;mso-list:l0 level1 lfo2; tab-stops:list .5in&quot;&gt;                               &lt;img src=&quot;https://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEh8J9WKLHgSzjhQAbCafe-cO50gcKm2qCXFa3DEp1L5ENZ_H2vrF38GoI5QHG4Wj3fcVNz_T9gCZ8sZ7HS5w73v-ku72mhM25XGdMAb74T42RFLMUt4XH00C7GfQDMDtEM0E1iuQBFLkw6C/s400/nmos.bmp&quot; style=&quot;cursor:pointer; cursor:hand;width: 400px; height: 263px;&quot; border=&quot;0&quot; alt=&quot;&quot; id=&quot;BLOGGER_PHOTO_ID_5630269839483668770&quot; /&gt;&lt;/p&gt;&lt;p class=&quot;MsoNormal&quot; style=&quot;margin-left:.5in;text-indent:-.25in;mso-list:l0 level1 lfo2; tab-stops:list .5in&quot;&gt;&lt;b&gt;Types of MOSFET&lt;/b&gt;&lt;/p&gt;&lt;p class=&quot;MsoNormal&quot;&gt;&lt;img src=&quot;https://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEjwuxwKtImw-QJ4YsBBljT5A1PYy9JQGQNNIkbywo5JJwtQMM213cUVqfrRxvZpbhIZqFsSwW2IcLAfgUcA2WDUKjJZU7HspzZrdM8URJS8KtU7_iahvdYtnmWoiTVcPXOGARpKRGuzedee/s400/nmos.bmp&quot; style=&quot;cursor:pointer; cursor:hand;width: 400px; height: 252px;&quot; border=&quot;0&quot; alt=&quot;&quot; id=&quot;BLOGGER_PHOTO_ID_5630272328944169090&quot; /&gt;&lt;/p&gt;&lt;p class=&quot;MsoNormal&quot;&gt;&lt;br /&gt;&lt;/p&gt;&lt;p class=&quot;MsoNormal&quot;&gt;&lt;br /&gt;&lt;/p&gt;&lt;p class=&quot;MsoNormal&quot;&gt;&lt;br /&gt;&lt;/p&gt;</content><link rel='replies' type='application/atom+xml' href='http://electronicsandu.blogspot.com/feeds/4887177049501616281/comments/default' title='Post Comments'/><link rel='replies' type='text/html' href='http://electronicsandu.blogspot.com/2011/07/introduction-to-mosfet.html#comment-form' title='0 Comments'/><link rel='edit' type='application/atom+xml' href='http://www.blogger.com/feeds/753459718586809216/posts/default/4887177049501616281'/><link rel='self' type='application/atom+xml' href='http://www.blogger.com/feeds/753459718586809216/posts/default/4887177049501616281'/><link rel='alternate' type='text/html' href='http://electronicsandu.blogspot.com/2011/07/introduction-to-mosfet.html' title='Introduction to MOSFET'/><author><name>Vlsi4u</name><uri>http://www.blogger.com/profile/12946039101359833907</uri><email>noreply@blogger.com</email><gd:image rel='http://schemas.google.com/g/2005#thumbnail' width='31' height='22' src='//blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEg4FIjfH0gdRsgN7xdLYcQBYnjtDHKFlfqnhGicad12qCC-gR2lzLQDl0Olf5Eg6fYHJIAGbzwfcu1iVDP9dm9Ll1iq5pceqCG-NqXNTfUmkNgqBggHMGyeZpzLhk6jhQQ/s220/images.jpg'/></author><media:thumbnail xmlns:media="http://search.yahoo.com/mrss/" url="https://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEjPzTp3A4LbBbpstVM01V8P_DL02c6lv-a2Dv-JpbNs-OYbe0Fne65jAB_JX-w2Lu_JaqvUtpsmI9MlasQYxFpfQWBAd8KMsvFkty9Q4qCMnG9BMbCUrd86Q5XY_4qk-mlmmel4Ca34W7Sb/s72-c/nmos.bmp" height="72" width="72"/><thr:total>0</thr:total></entry></feed>