MRAM-Info - MRAM tech news and resources

Spingate: a new startup to develop Perpendicular-MRAM

mram — Thu, 05 Nov 2009 05:27:01 +0000

Spingate is a new US-based fabless company focusing on development, licensing and manufacturing of solid state memory, specifically, perpendicular MRAM.

We have talked to Dr. Alex Shukh, Spingate's co-founder, CTO and CEO. Alex explains that they have decided to focus on perpendicular MRAM because according to their estimates it does not suffer from several fundamental issues of its longitudinal (in-plane) analogue.

Intel and Numonyx announced a new higher-density phase change memory technology

mram — Fri, 30 Oct 2009 06:21:14 +0000

Intel and Numonyx have announced a new memory technology that "paves the way for scalable, higher density phase change memory (PCM) products". They have created a 64Mb chip that enables to stack multiple layers of PCM arrays in a single die. They cal it PCMS (phase change memory and switch).

Via Engadget

Researchers create first MRAM-based FPGA

mram — Fri, 02 Oct 2009 12:15:32 +0000

Researchers at the Montpellier Laboratory of Informatics, Robotics and Microelectronics (LIRMM), in France, say they have developed an MRAM-based FPGA circuit.

They use Thermally Assisted Switching (TAS)-MRAM with a small current for heating the Magnetic Junction Tunnel, allowing a higher sensitivity to magnetic fields. The magnetic field is induced by a current line above or below the junction depending on the technology.

Crocus announced a new STT-MRAM technology that can compete with DRAM and NOR-Flash

mram — Thu, 01 Oct 2009 17:55:08 +0000

Crocus Technology announced the development of a new STT-MRAM technology with a minimum feature size of 50nm that will deliver on the promise of using STT memory in high-density memory applications, that will be competitive with DRAM and NOR-Flash.

Crocus' development addresses two critical problems in the implementation of STT MRAM that have previously hampered competitiveness with other popular memory types: memory bit density and stability. Crocus has developed a magnetic cell with an industry leading dynamic (i.e. sub-10 nanosecond) write current level of 2x10(6) amp/cm(2), e.g. less than 100µA write current per bit, a major milestone which will remove a significant obstacle to bit cell scaling and density. Crocus' STT technology also provides for industry-leading data stability.

Micromem's MRAM product is fully packaged and being tested

mram — Tue, 29 Sep 2009 07:44:29 +0000

Micromem says that their Memory (MRAM) product is now complete through the Global-Communication-Semiconductor and BAE Systems foundries. The MRAM is fully packaged in arrays, and it's being tested and evaluated against standard and routine memory tests.

MRAM presentation

mram — Sun, 27 Sep 2009 11:13:55 +0000

Someone uploaded an MRAM presentation online. It explains how MRAM works, about GMR, competing technologies, advantages, applications and more.

Samsung has started to produce 512Mb Phase-Change memory

mram — Wed, 23 Sep 2009 11:08:07 +0000

Samsung Electronics announced today that it has begun production of 512Mb Phase-Change Memory (PRAM). It is targeted for mobile devices. It features high-performance and low power. Samsung says that a handset with PRAM can extend its lifetime over 20%.

The 512Mb PRAM can erase 64KWs (kilowords) in 80ms, said to be over 10 times faster than NOR Flash memory. In data segments of 5MBs, PRAM can erase and rewrite data approximately seven times faster than NOR Flash.

Via TechOn

Spin Transfer Technologies create one of the fastest MRAM write-cycle devices

mram — Tue, 22 Sep 2009 04:50:59 +0000

Researchers from NY University, together with Spin Transfer Technologies have demonstrated magnetic vector switching for current pulses as short as 100 picoseconds. This is among the shortest write times reported by developers of MRAM devices.

Airbus to use Everspin's MRAM in flight control computer

mram — Wed, 09 Sep 2009 04:39:30 +0000

Everspin announced today that Airbus has decided to use their MRAM for the flight control computer on the A350 XWB aircraft.

Airbus will use 4Mb and 16Mb MRAM chips. The MRAM will replace both SRAM and Flash components.

Crocus and Grandis present their MRAM tech at the Flash Memory Summit 2009

mram — Sun, 16 Aug 2009 07:05:05 +0000

The final day of the Flash Memory Summit started with a panel on new memory technologies.

Crocus Technologies presented their TAS MRAM design which is targeted at SRAM and flash applications. Their product compared to SRAM at a 25% smaller cell, adding Non-Volatile capability, and a zero standby current. The product compared to NAND flash by having a smaller cell and only 1X area overhead for controlling circuitry. It is currently being built on a 130nm node and can be scaled. It is targeted at Cache memory, data logging, medical instrumentation, casino gaming and industrial control applications. They are targeting several business models - selling the standard product ICs, licensing IP a process technology licensing service and providing a foundry service.